View CM1000E4C-66R_4470280.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1000E4C-66R
IC............................................................... 1000 A VCES ....................................................... 3300V 1-element in a Pack (for brake chopper) Insulated Type LPT-IGBT / Soft Recovery Diode AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
29.5 0.5
57 0.25
190 0.5 57 0.25
57 0.25
6-M8 NUTS
15 0.3
6
4
2
140 0.5 124 0.25
20 -0.2 40 0.3
+0.1
40 0.3
9 0.2
5.2 0.3
28 0.5 5 0.2
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
38
+1 0
LABEL
6 (C) C
4 (C)
2 (A)
5
>PET+PBT<
3
1
E C
>PET+PBT<
G
G E 5 (E) 20.25 0.3 8-7 MOUNTING HOLES 3 (E) 1 (K)
3-M4 NUTS
CIRCUIT DIAGRAM
41.25 0.3 79.4 0.3 61.5 0.3
13 0.3 61.5 0.3
SCREWING DEPTH MIN 7.7
SCREWING DEPTH MIN 16.5
Mar. 2009 1
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Conditions
VGE = 0V, Tj = -40...+150C Collector-emitter voltage VGE = 0V, Tj = -50C Gate-emitter voltage VCE = 0V, Tj = 25C DC, Tc = 95C Collector current (Note 1) Pulse DC Emitter current (Note 2) (Note 1) Pulse Maximum power dissipation(Note 3) Tc = 25C, IGBT part Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD 10 pC Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC =2500V, VCE VCES, VGE =15V, Tj =150C
Ratings 3300 3200 20 1000 3000 1000 3000 10400 6000 2600 -50 ~ +150 -50 ~ +150 -55 ~ +150 10
Unit V V A A A A W V V C C C s
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions Tj = 25C Tj = 125C Tj = 150C Min -- -- -- 5.7 -0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 4.0 24.0 6.2 -- 140.0 8.7 4.0 10.7 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 1.65 1.95 2.10 1.80 2.20 2.40 2.70 2.80 2.85 0.30 0.35 0.40 1.35 1.65 1.70 1.50 1.80 1.90 2.15 2.30 2.25 Max 4.0 -- -- 6.7 0.5 -- -- -- -- -- 3.70 -- -- 1.25 1.25 -- 0.50 0.50 -- -- -- -- -- -- -- 3.30 3.30 -- 1.00 1.00 -- -- -- -- -- -- -- 2.80 -- Unit
ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat)
Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage
VCE = VCES, VGE = 0V VCE = 10 V, IC = 100 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25C VCC = 1800 V, IC = 1000 A, VGE = 15 V IC = 1000 A VGE = 15 V
mA V A nF nF nF C V
td(on)
Turn-on delay time VCC = 1800 V IC = 1000 A VGE = 15 V RG(on) = 2.4 Ls = 150 nH Inductive load
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time VCC = 1800 V IC = 1000 A VGE = 15 V RG(off) = 8.4 Ls = 150 nH Inductive load
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
VEC
Emitter-collector voltage
(Note 2)
IE = 1000 A VGE = 0 V
Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C (Note 4) Tj = 125C Tj = 150C (Note 4)
s
s
J/P
J/P
s
s
J/P
J/P
V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 2
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol Item Reverse recovery time
(Note 2)
Conditions Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C
trr
Irr
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Erec(10%)
Reverse recovery energy
(Note 2)(Note 5)
VCC = 1800 V IC = 1000 A VGE = 15 V RG(on) = 2.4 Ls = 150 nH Inductive load
Erec
Reverse recovery energy
(Note 2)(Note 6)
Min -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ 0.50 0.70 0.80 850 1000 1050 700 1150 1350 0.70 1.20 1.35 0.80 1.35 1.55
Max -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Unit s
A
C
J/P
J/P
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, grease = 1W/m*K ,D(c-f) = 100 m Min -- -- -- -- Limits Typ -- -- -- 7.0 Max 12.0 22.5 22.5 -- Unit K/kW K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' rg Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- -- -- -- Limits Typ -- -- -- 1.2 -- -- -- 22.0 33.0 0.24 0.36 2.25 Max 22.0 6.0 3.0 -- -- -- -- -- -- -- -- -- Unit N*m N*m N*m kg -- mm mm nH nH m m
Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor
Collector to Emitter Anode to Cathode Tc = 25C, Collector to Emitter Tc = 25C, Anode to Cathode Tc = 25C
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode clamp diode (Clamp-Di). 3. Junction temperature (Tj) should not exceed Tjmax rating (150C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. The integration range of Eon / Eoff / Erec according to IEC 60747.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 3
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2000 Tj = 150C VGE = 19V 1600
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS (TYPICAL) 2000 VCE = VGE
1600 VGE = 15V VGE = 11V
COLLECTOR CURRENT (A)
1200
VGE = 13V
1200
800 VGE = 9V 400
800
400 Tj = 25C Tj = 150C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2000 VGE = 15V
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2000
1600
COLLECTOR CURRENT (A) EMITTER CURRENT (A)
1600
1200
1200
800
800
400 Tj = 25C Tj = 125C Tj = 150C 0 0 1 2 3 4 5
400 Tj = 25C Tj = 125C Tj = 150C 0 0 1 2 3 4 5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 4
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1800V, IC = 1000A Tj = 25C 15
VGE = 0V, Tj = 25C f = 100kHz
Cies
GATE-EMITTER VOLTAGE (V)
10
CAPACITANCE (nF)
102
7 5 3 2
5
0
101
7 5 3 2
Coes Cres
-5
-10
100 -1 10
23
5 7 100
23
5 7 101
23
5 7 102
-15
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 125C Inductive load 7
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 150C Inductive load
Eon
6
6 Eon
SWITCHING ENERGIES (J/P)
5
SWITCHING ENERGIES (J/P)
5
4 Eoff 3
4 Eoff 3
2 Erec 1
2
Erec
1
0
0
400
800
1200
1600
2000
0
0
400
800
1200
1600
2000
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 5
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, IC = 1000A VGE = 15V, LS = 150nH 6 Tj = 125C, Inductive load
SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, IC = 1000A VGE = 15V, LS = 150nH 6 Tj = 150C, Inductive load
5 Eon
5 Eon 4
4
3 Eoff 2 Erec
3 Eoff 2 Erec
1
1
0
0
5
10
15
20
0
0
5
10
15
20
GATE RESISTOR ()
GATE RESISTOR ()
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 125C Inductive load
SWITCHING TIMES (s)
VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 150C Inductive load
101
SWITCHING TIMES (s)
7 5 3 2
101
7 5 3 2
td(off) td(on) tf
td(off) td(on) tr
100
7 5 3 2
100
7 5 3 2
10-1
7 5 3 2
10-1 tr
7 5 3 2 2 3 45 7 103 2 3 45 7 104
tf
10-2 2 10
10-2 2 10
2
3 45
7 103
2
3 45
7 104
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 6
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102
7 5
104 VCC = 1800V, VGE = 15V RG(on) = 2.4, LS = 150nH Tj = 150C, Inductive load
7 5 3 2
REVERSE RECOVERY TIME (s)
2
2
REVERSE RECOVERY TIME (s)
3
3
REVERSE RECOVERY CURRENT (A)
3 2
101
7 5 3 2
lrr
103
7 5 3 2
101
7 5 3 2
lrr
103
7 5 3 2
100
7 5 3 2
trr
102
7 5 3 2
100
7 5 3 2
trr
102
7 5 3 2
10-1 2 10
2
3 45
7 103
2
3 45
101 7 104
10-1 2 10
2
3 45
7 103
2
3 45
7 104
101
EMITTER CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Rth(j-c)Q = 12.0K/kW Rth(j-c)R = 22.5K/kW 1.0
0.8
Z th( j -c ) ( t ) =
Ri [K/kW] : i [sec] :
R 1-exp
i i=I
n
-
t
ti
0.6
1 0.0096 0.0001
2 0.1893 0.0058
3 0.4044 0.0602
4 0.3967 0.3512
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 7
REVERSE RECOVERY CURRENT (A)
VCC = 1800V, VGE = 15V RG(on) = 2.4, LS = 150nH Tj = 125C, Inductive load
7 5

PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 4000 VCC 2500V, VGE = 15V Tj = 150C, RG(off) = 8.4 16
SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) VCC 2500V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 Tj = 150C
COLLECTOR CURRENT (A)
3000
COLLECTOR CURRENT (kA)
12
2000
8
1000
4
0
0
1000
2000
3000
4000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 4000 VCC 2500V, di/dt < 6kA/s Tj = 150C
REVERSE RECOVERY CURRENT (A)
3000
2000
1000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
Mar. 2009 8

▲Up To Search▲

Price & Availability of CM1000E4C-66R

	To Download CM1000E4C-66R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .